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SPU11N10

SPU11N10

For Reference Only

Part Number SPU11N10
PNEDA Part # SPU11N10
Description MOSFET N-CH 100V 10.5A IPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPU11N10 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPU11N10
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SPU11N10, SPU11N10 Datasheet (Total Pages: 8, Size: 493.2 KB)
PDFSPU11N10 Datasheet Cover
SPU11N10 Datasheet Page 2 SPU11N10 Datasheet Page 3 SPU11N10 Datasheet Page 4 SPU11N10 Datasheet Page 5 SPU11N10 Datasheet Page 6 SPU11N10 Datasheet Page 7 SPU11N10 Datasheet Page 8

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SPU11N10 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs18.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageP-TO251-3-1
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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