SPW32N50C3FKSA1
For Reference Only
| Part Number | SPW32N50C3FKSA1 |
| PNEDA Part # | SPW32N50C3FKSA1 |
| Description | MOSFET N-CH 560V 32A TO-247 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,136 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPW32N50C3FKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPW32N50C3FKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPW32N50C3FKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 560V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 284W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
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Manufacturer STMicroelectronics Series DeepGATE™, STripFET™ VI FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V FET Feature - Power Dissipation (Max) 140W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
