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SQ1922AEEH-T1_GE3

SQ1922AEEH-T1_GE3

For Reference Only

Part Number SQ1922AEEH-T1_GE3
PNEDA Part # SQ1922AEEH-T1_GE3
Description MOSFET N-CH DUAL 20V .85A SOT-36
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 26,754
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ1922AEEH-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ1922AEEH-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ1922AEEH-T1_GE3, SQ1922AEEH-T1_GE3 Datasheet (Total Pages: 17, Size: 407.4 KB)
PDFSQ1922AEEH-T1_GE3 Datasheet Cover
SQ1922AEEH-T1_GE3 Datasheet Page 2 SQ1922AEEH-T1_GE3 Datasheet Page 3 SQ1922AEEH-T1_GE3 Datasheet Page 4 SQ1922AEEH-T1_GE3 Datasheet Page 5 SQ1922AEEH-T1_GE3 Datasheet Page 6 SQ1922AEEH-T1_GE3 Datasheet Page 7 SQ1922AEEH-T1_GE3 Datasheet Page 8 SQ1922AEEH-T1_GE3 Datasheet Page 9 SQ1922AEEH-T1_GE3 Datasheet Page 10 SQ1922AEEH-T1_GE3 Datasheet Page 11

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SQ1922AEEH-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C850mA (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 10V
Power - Max1.5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6

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