Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQ2319ADS-T1_GE3

SQ2319ADS-T1_GE3

For Reference Only

Part Number SQ2319ADS-T1_GE3
PNEDA Part # SQ2319ADS-T1_GE3
Description MOSFET P-CH 40V 4.6A SOT23-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,024,218
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ2319ADS-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ2319ADS-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ2319ADS-T1_GE3, SQ2319ADS-T1_GE3 Datasheet (Total Pages: 10, Size: 256.93 KB)
PDFSQ2319ADS-T1_GE3 Datasheet Cover
SQ2319ADS-T1_GE3 Datasheet Page 2 SQ2319ADS-T1_GE3 Datasheet Page 3 SQ2319ADS-T1_GE3 Datasheet Page 4 SQ2319ADS-T1_GE3 Datasheet Page 5 SQ2319ADS-T1_GE3 Datasheet Page 6 SQ2319ADS-T1_GE3 Datasheet Page 7 SQ2319ADS-T1_GE3 Datasheet Page 8 SQ2319ADS-T1_GE3 Datasheet Page 9 SQ2319ADS-T1_GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQ2319ADS-T1_GE3 Datasheet
  • where to find SQ2319ADS-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQ2319ADS-T1_GE3
  • SQ2319ADS-T1_GE3 PDF Datasheet
  • SQ2319ADS-T1_GE3 Stock

  • SQ2319ADS-T1_GE3 Pinout
  • Datasheet SQ2319ADS-T1_GE3
  • SQ2319ADS-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQ2319ADS-T1_GE3 Price
  • SQ2319ADS-T1_GE3 Distributor

SQ2319ADS-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds620pF @ 20V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

DMN62D0SFD-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

540mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

0.87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

30.2pF @ 25V

FET Feature

-

Power Dissipation (Max)

430mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X1-DFN1212-3

Package / Case

3-UDFN

FQD2P40TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

1.56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6.5Ohm @ 780mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 38W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFZ24NPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

370pF @ 25V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NTB6413ANG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

28mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

51nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDMJ1027P

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

6-MicroFET (2x2)

Package / Case

6-VDFN Exposed Pad

Recently Sold

ACPL-247-500E

ACPL-247-500E

Broadcom

OPTOISO 3KV 4CH TRANS 16SOIC

B560CQ-13-F

B560CQ-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 5A SMC

AT88SC25616C-SU

AT88SC25616C-SU

Microchip Technology

IC EEPROM 256K I2C 5MHZ 8SOIC

AEDS-8011-A11

AEDS-8011-A11

Broadcom

ROTARY ENCODER OPTICAL 500PPR

MX25V1635FZNI

MX25V1635FZNI

Macronix

IC FLASH 16M SPI 80MHZ 8WSON

M25P64-VMF6P

M25P64-VMF6P

Micron Technology Inc.

IC FLASH 64M SPI 50MHZ 16SO W

A6H-8101

A6H-8101

Omron Electronics Inc-EMC Div

SWITCH SLIDE DIP SPST 25MA 24V

DS1230Y-150

DS1230Y-150

Maxim Integrated

IC NVSRAM 256K PARALLEL 28EDIP

MAX31865ATP+

MAX31865ATP+

Maxim Integrated

IC RTD TO DIGITAL CONVERT 20QFN

CM2009-00QR

CM2009-00QR

ON Semiconductor

VGA PORT COMPANION-65 OHM QSOP16

MC68HC908GP32CFB

MC68HC908GP32CFB

NXP

IC MCU 8BIT 32KB FLASH 44QFP

74HC4051D

74HC4051D

Toshiba Semiconductor and Storage

IC MUX 8:1 4 OHM 16SOIC