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SQ3427EEV-T1-GE3

SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3

For Reference Only

Part Number SQ3427EEV-T1-GE3
PNEDA Part # SQ3427EEV-T1-GE3
Description MOSFET P-CH 60V 5.5A 6TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,312
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Aug 10 - Aug 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ3427EEV-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ3427EEV-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ3427EEV-T1-GE3, SQ3427EEV-T1-GE3 Datasheet (Total Pages: 11, Size: 212.15 KB)
PDFSQ3427EEV-T1-GE3 Datasheet Cover
SQ3427EEV-T1-GE3 Datasheet Page 2 SQ3427EEV-T1-GE3 Datasheet Page 3 SQ3427EEV-T1-GE3 Datasheet Page 4 SQ3427EEV-T1-GE3 Datasheet Page 5 SQ3427EEV-T1-GE3 Datasheet Page 6 SQ3427EEV-T1-GE3 Datasheet Page 7 SQ3427EEV-T1-GE3 Datasheet Page 8 SQ3427EEV-T1-GE3 Datasheet Page 9 SQ3427EEV-T1-GE3 Datasheet Page 10 SQ3427EEV-T1-GE3 Datasheet Page 11

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SQ3427EEV-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs82mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1125pF @ 30V
FET Feature-
Power Dissipation (Max)5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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