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SQ4050EY-T1_GE3

SQ4050EY-T1_GE3

For Reference Only

Part Number SQ4050EY-T1_GE3
PNEDA Part # SQ4050EY-T1_GE3
Description MOSFET N-CHANNEL 40V 19A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,502
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4050EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4050EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ4050EY-T1_GE3, SQ4050EY-T1_GE3 Datasheet (Total Pages: 8, Size: 216.7 KB)
PDFSQ4050EY-T1_GE3 Datasheet Cover
SQ4050EY-T1_GE3 Datasheet Page 2 SQ4050EY-T1_GE3 Datasheet Page 3 SQ4050EY-T1_GE3 Datasheet Page 4 SQ4050EY-T1_GE3 Datasheet Page 5 SQ4050EY-T1_GE3 Datasheet Page 6 SQ4050EY-T1_GE3 Datasheet Page 7 SQ4050EY-T1_GE3 Datasheet Page 8

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SQ4050EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2406pF @ 20V
FET Feature-
Power Dissipation (Max)6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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