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SQ4284EY-T1_GE3

SQ4284EY-T1_GE3

For Reference Only

Part Number SQ4284EY-T1_GE3
PNEDA Part # SQ4284EY-T1_GE3
Description MOSFET 2N-CH 40V 8A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4284EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4284EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ4284EY-T1_GE3, SQ4284EY-T1_GE3 Datasheet (Total Pages: 9, Size: 185.81 KB)
PDFSQ4284EY-T1_GE3 Datasheet Cover
SQ4284EY-T1_GE3 Datasheet Page 2 SQ4284EY-T1_GE3 Datasheet Page 3 SQ4284EY-T1_GE3 Datasheet Page 4 SQ4284EY-T1_GE3 Datasheet Page 5 SQ4284EY-T1_GE3 Datasheet Page 6 SQ4284EY-T1_GE3 Datasheet Page 7 SQ4284EY-T1_GE3 Datasheet Page 8 SQ4284EY-T1_GE3 Datasheet Page 9

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SQ4284EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2200pF @ 25V
Power - Max3.9W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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