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SQ4840EY-T1_GE3

SQ4840EY-T1_GE3

For Reference Only

Part Number SQ4840EY-T1_GE3
PNEDA Part # SQ4840EY-T1_GE3
Description MOSFET N-CH 40V 20.7A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ4840EY-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ4840EY-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ4840EY-T1_GE3, SQ4840EY-T1_GE3 Datasheet (Total Pages: 9, Size: 183.92 KB)
PDFSQ4840EY-T1_GE3 Datasheet Cover
SQ4840EY-T1_GE3 Datasheet Page 2 SQ4840EY-T1_GE3 Datasheet Page 3 SQ4840EY-T1_GE3 Datasheet Page 4 SQ4840EY-T1_GE3 Datasheet Page 5 SQ4840EY-T1_GE3 Datasheet Page 6 SQ4840EY-T1_GE3 Datasheet Page 7 SQ4840EY-T1_GE3 Datasheet Page 8 SQ4840EY-T1_GE3 Datasheet Page 9

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SQ4840EY-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 14A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2440pF @ 20V
FET Feature-
Power Dissipation (Max)7.1W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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