SQ4949EY-T1_GE3
For Reference Only
| Part Number | SQ4949EY-T1_GE3 |
| PNEDA Part # | SQ4949EY-T1_GE3 |
| Description | MOSFET 2 P-CH 30V 7.5A 8SOIC |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 2,844 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQ4949EY-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQ4949EY-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQ4949EY-T1_GE3 Datasheet
- where to find SQ4949EY-T1_GE3
- Vishay Siliconix
- Vishay Siliconix SQ4949EY-T1_GE3
- SQ4949EY-T1_GE3 PDF Datasheet
- SQ4949EY-T1_GE3 Stock
- SQ4949EY-T1_GE3 Pinout
- Datasheet SQ4949EY-T1_GE3
- SQ4949EY-T1_GE3 Supplier
- Vishay Siliconix Distributor
- SQ4949EY-T1_GE3 Price
- SQ4949EY-T1_GE3 Distributor
SQ4949EY-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.9A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
| Power - Max | 3.3W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A Rds On (Max) @ Id, Vgs 24mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer EPC Series eGaN® FET Type 2 N-Channel (Half Bridge) FET Feature GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 23A Rds On (Max) @ Id, Vgs 6.3mOhm @ 20A, 5V Vgs(th) (Max) @ Id 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V Power - Max - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 7.1A Rds On (Max) @ Id, Vgs 17mOhm @ 11.1A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.4W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case PowerPAK® SO-8 Dual Supplier Device Package PowerPAK® SO-8 Dual |
Manufacturer ON Semiconductor Series PowerTrench® FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A, 8A Rds On (Max) @ Id, Vgs 23.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V Power - Max 700mW, 900mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerWDFN Supplier Device Package 8-Power33 (3x3) |
Manufacturer Rohm Semiconductor Series Automotive, AEC-Q101 FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 5V, 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V, 490pF @ 10V Power - Max 2W Operating Temperature 150°C Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
