SQ4961EY-T1_GE3
For Reference Only
| Part Number | SQ4961EY-T1_GE3 |
| PNEDA Part # | SQ4961EY-T1_GE3 |
| Description | MOSFET DUAL P-CHAN 60V SO8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,362 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SQ4961EY-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SQ4961EY-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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SQ4961EY-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140pF @ 25V |
| Power - Max | 3.3W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 7.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V Power - Max 65W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount, Wettable Flank Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-10 |
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