SQ4961EY-T1_GE3
For Reference Only
| Part Number | SQ4961EY-T1_GE3 |
| PNEDA Part # | SQ4961EY-T1_GE3 |
| Description | MOSFET DUAL P-CHAN 60V SO8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 7,362 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 11 - May 16 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SQ4961EY-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SQ4961EY-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SQ4961EY-T1_GE3 Datasheet
- where to find SQ4961EY-T1_GE3
- Vishay Siliconix
- Vishay Siliconix SQ4961EY-T1_GE3
- SQ4961EY-T1_GE3 PDF Datasheet
- SQ4961EY-T1_GE3 Stock
- SQ4961EY-T1_GE3 Pinout
- Datasheet SQ4961EY-T1_GE3
- SQ4961EY-T1_GE3 Supplier
- Vishay Siliconix Distributor
- SQ4961EY-T1_GE3 Price
- SQ4961EY-T1_GE3 Distributor
SQ4961EY-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140pF @ 25V |
| Power - Max | 3.3W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V, 8V Current - Continuous Drain (Id) @ 25°C 6A, 3.8A Rds On (Max) @ Id, Vgs 18mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
Manufacturer Vishay Siliconix Series - FET Type 4 N-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 830mA Rds On (Max) @ Id, Vgs 1.75Ohm @ 200mA, 5V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 110pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case - Supplier Device Package 14-DIP |
Manufacturer STMicroelectronics Series STripFET™ FET Type 2 N-Channel (Dual) Asymmetrical FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 32A, 60A Rds On (Max) @ Id, Vgs 9.2mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V Power - Max 23W, 50W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerVDFN Supplier Device Package PowerFlat™ (5x6) |
Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 7.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V Power - Max 65W Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount, Wettable Flank Package / Case 8-PowerVDFN Supplier Device Package PG-TDSON-8-10 |
Manufacturer Nexperia USA Inc. Series - FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.6A Rds On (Max) @ Id, Vgs 67mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 804pF @ 10V Power - Max 515mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-UDFN Exposed Pad Supplier Device Package 6-HUSON-EP (2x2) |
