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SQ9945AEY-T1-E3

SQ9945AEY-T1-E3

For Reference Only

Part Number SQ9945AEY-T1-E3
PNEDA Part # SQ9945AEY-T1-E3
Description MOSFET 2N-CH 60V 3.7A 8SOIC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,680
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ9945AEY-T1-E3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ9945AEY-T1-E3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQ9945AEY-T1-E3, SQ9945AEY-T1-E3 Datasheet (Total Pages: 9, Size: 114.17 KB)
PDFSQ9945AEY-T1-E3 Datasheet Cover
SQ9945AEY-T1-E3 Datasheet Page 2 SQ9945AEY-T1-E3 Datasheet Page 3 SQ9945AEY-T1-E3 Datasheet Page 4 SQ9945AEY-T1-E3 Datasheet Page 5 SQ9945AEY-T1-E3 Datasheet Page 6 SQ9945AEY-T1-E3 Datasheet Page 7 SQ9945AEY-T1-E3 Datasheet Page 8 SQ9945AEY-T1-E3 Datasheet Page 9

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SQ9945AEY-T1-E3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3.7A
Rds On (Max) @ Id, Vgs80mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max2.4W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Rds On (Max) @ Id, Vgs

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Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Input Capacitance (Ciss) (Max) @ Vds

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Logic Level Gate

Drain to Source Voltage (Vdss)

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Current - Continuous Drain (Id) @ 25°C

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Rds On (Max) @ Id, Vgs

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Vgs(th) (Max) @ Id

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-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

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SOT-563, SOT-666

Supplier Device Package

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