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SQD15N06-42L_GE3

SQD15N06-42L_GE3

For Reference Only

Part Number SQD15N06-42L_GE3
PNEDA Part # SQD15N06-42L_GE3
Description MOSFET N-CH 60V 15A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,140
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD15N06-42L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD15N06-42L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD15N06-42L_GE3, SQD15N06-42L_GE3 Datasheet (Total Pages: 11, Size: 219.88 KB)
PDFSQD15N06-42L_GE3 Datasheet Cover
SQD15N06-42L_GE3 Datasheet Page 2 SQD15N06-42L_GE3 Datasheet Page 3 SQD15N06-42L_GE3 Datasheet Page 4 SQD15N06-42L_GE3 Datasheet Page 5 SQD15N06-42L_GE3 Datasheet Page 6 SQD15N06-42L_GE3 Datasheet Page 7 SQD15N06-42L_GE3 Datasheet Page 8 SQD15N06-42L_GE3 Datasheet Page 9 SQD15N06-42L_GE3 Datasheet Page 10 SQD15N06-42L_GE3 Datasheet Page 11

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SQD15N06-42L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs42mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds535pF @ 25V
FET Feature-
Power Dissipation (Max)37W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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