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SQD40020E_GE3

SQD40020E_GE3

For Reference Only

Part Number SQD40020E_GE3
PNEDA Part # SQD40020E_GE3
Description MOSFET N-CH 40V AUTO TO-252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD40020E_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD40020E_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD40020E_GE3, SQD40020E_GE3 Datasheet (Total Pages: 8, Size: 277.74 KB)
PDFSQD40020E_GE3 Datasheet Cover
SQD40020E_GE3 Datasheet Page 2 SQD40020E_GE3 Datasheet Page 3 SQD40020E_GE3 Datasheet Page 4 SQD40020E_GE3 Datasheet Page 5 SQD40020E_GE3 Datasheet Page 6 SQD40020E_GE3 Datasheet Page 7 SQD40020E_GE3 Datasheet Page 8

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SQD40020E_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8000pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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