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SQD45N05-20L-GE3

SQD45N05-20L-GE3

For Reference Only

Part Number SQD45N05-20L-GE3
PNEDA Part # SQD45N05-20L-GE3
Description MOSFET N-CH 50V 50A TO252
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,284
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQD45N05-20L-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQD45N05-20L-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQD45N05-20L-GE3, SQD45N05-20L-GE3 Datasheet (Total Pages: 1, Size: 18.94 KB)
PDFSQD45N05-20L-GE3 Datasheet Cover

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SQD45N05-20L-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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