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SQJ202EP-T1_GE3

SQJ202EP-T1_GE3

For Reference Only

Part Number SQJ202EP-T1_GE3
PNEDA Part # SQJ202EP-T1_GE3
Description MOSFET 2N-CH 12V 20A/60A PPAK SO
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 27,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ202EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ202EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ202EP-T1_GE3, SQJ202EP-T1_GE3 Datasheet (Total Pages: 12, Size: 356.92 KB)
PDFSQJ202EP-T1_GE3 Datasheet Cover
SQJ202EP-T1_GE3 Datasheet Page 2 SQJ202EP-T1_GE3 Datasheet Page 3 SQJ202EP-T1_GE3 Datasheet Page 4 SQJ202EP-T1_GE3 Datasheet Page 5 SQJ202EP-T1_GE3 Datasheet Page 6 SQJ202EP-T1_GE3 Datasheet Page 7 SQJ202EP-T1_GE3 Datasheet Page 8 SQJ202EP-T1_GE3 Datasheet Page 9 SQJ202EP-T1_GE3 Datasheet Page 10 SQJ202EP-T1_GE3 Datasheet Page 11

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SQJ202EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C20A, 60A
Rds On (Max) @ Id, Vgs6.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds975pF @ 6V
Power - Max27W, 48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

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