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SQJ208EP-T1_GE3

SQJ208EP-T1_GE3

For Reference Only

Part Number SQJ208EP-T1_GE3
PNEDA Part # SQJ208EP-T1_GE3
Description MOSFET DUAL N-CH AUTO 40V PP SO-
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,178
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ208EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ208EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ208EP-T1_GE3, SQJ208EP-T1_GE3 Datasheet (Total Pages: 12, Size: 476.8 KB)
PDFSQJ208EP-T1_GE3 Datasheet Cover
SQJ208EP-T1_GE3 Datasheet Page 2 SQJ208EP-T1_GE3 Datasheet Page 3 SQJ208EP-T1_GE3 Datasheet Page 4 SQJ208EP-T1_GE3 Datasheet Page 5 SQJ208EP-T1_GE3 Datasheet Page 6 SQJ208EP-T1_GE3 Datasheet Page 7 SQJ208EP-T1_GE3 Datasheet Page 8 SQJ208EP-T1_GE3 Datasheet Page 9 SQJ208EP-T1_GE3 Datasheet Page 10 SQJ208EP-T1_GE3 Datasheet Page 11

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SQJ208EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs9.4mOhm @ 6A, 10V, 3.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA, 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs33nC, 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1700pF, 3900pF @ 25V
Power - Max27W (Tc), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

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