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SQJ260EP-T1_GE3

SQJ260EP-T1_GE3

For Reference Only

Part Number SQJ260EP-T1_GE3
PNEDA Part # SQJ260EP-T1_GE3
Description MOSFET 2 N-CH 60V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ260EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ260EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ260EP-T1_GE3, SQJ260EP-T1_GE3 Datasheet (Total Pages: 12, Size: 411.27 KB)
PDFSQJ260EP-T1_GE3 Datasheet Cover
SQJ260EP-T1_GE3 Datasheet Page 2 SQJ260EP-T1_GE3 Datasheet Page 3 SQJ260EP-T1_GE3 Datasheet Page 4 SQJ260EP-T1_GE3 Datasheet Page 5 SQJ260EP-T1_GE3 Datasheet Page 6 SQJ260EP-T1_GE3 Datasheet Page 7 SQJ260EP-T1_GE3 Datasheet Page 8 SQJ260EP-T1_GE3 Datasheet Page 9 SQJ260EP-T1_GE3 Datasheet Page 10 SQJ260EP-T1_GE3 Datasheet Page 11

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SQJ260EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20A (Tc), 54A (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 6A, 10V, 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V, 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V, 2500pF @ 25V
Power - Max27W (Tc), 48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

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