SQJ262EP-T1_GE3
For Reference Only
| Part Number | SQJ262EP-T1_GE3 |
| PNEDA Part # | SQJ262EP-T1_GE3 |
| Description | MOSFET 2 N-CH 60V POWERPAK SO8 |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,636 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 20 - Jun 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SQJ262EP-T1_GE3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
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| Mfr. Part Number | SQJ262EP-T1_GE3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
| Datasheet |
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SQJ262EP-T1_GE3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V, 23nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V, 1260pF @ 25V |
| Power - Max | 27W (Tc), 48W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
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