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SQJ500AEP-T1_GE3

SQJ500AEP-T1_GE3

For Reference Only

Part Number SQJ500AEP-T1_GE3
PNEDA Part # SQJ500AEP-T1_GE3
Description MOSFET N/P CHAN 40V SO8L DUAL
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 24,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ500AEP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ500AEP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ500AEP-T1_GE3, SQJ500AEP-T1_GE3 Datasheet (Total Pages: 15, Size: 268.47 KB)
PDFSQJ500AEP-T1_GE3 Datasheet Cover
SQJ500AEP-T1_GE3 Datasheet Page 2 SQJ500AEP-T1_GE3 Datasheet Page 3 SQJ500AEP-T1_GE3 Datasheet Page 4 SQJ500AEP-T1_GE3 Datasheet Page 5 SQJ500AEP-T1_GE3 Datasheet Page 6 SQJ500AEP-T1_GE3 Datasheet Page 7 SQJ500AEP-T1_GE3 Datasheet Page 8 SQJ500AEP-T1_GE3 Datasheet Page 9 SQJ500AEP-T1_GE3 Datasheet Page 10 SQJ500AEP-T1_GE3 Datasheet Page 11

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SQJ500AEP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN and P-Channel
FET Feature-
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1850pF @ 20V
Power - Max48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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