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SQJ504EP-T1_GE3

SQJ504EP-T1_GE3

For Reference Only

Part Number SQJ504EP-T1_GE3
PNEDA Part # SQJ504EP-T1_GE3
Description MOSFET N/P CHAN 40V POWERPAK SO-
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ504EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ504EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ504EP-T1_GE3, SQJ504EP-T1_GE3 Datasheet (Total Pages: 13, Size: 306.13 KB)
PDFSQJ504EP-T1_GE3 Datasheet Cover
SQJ504EP-T1_GE3 Datasheet Page 2 SQJ504EP-T1_GE3 Datasheet Page 3 SQJ504EP-T1_GE3 Datasheet Page 4 SQJ504EP-T1_GE3 Datasheet Page 5 SQJ504EP-T1_GE3 Datasheet Page 6 SQJ504EP-T1_GE3 Datasheet Page 7 SQJ504EP-T1_GE3 Datasheet Page 8 SQJ504EP-T1_GE3 Datasheet Page 9 SQJ504EP-T1_GE3 Datasheet Page 10 SQJ504EP-T1_GE3 Datasheet Page 11

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SQJ504EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V, 4600pF @ 25V
Power - Max34W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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