Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ504EP-T1_GE3

SQJ504EP-T1_GE3

For Reference Only

Part Number SQJ504EP-T1_GE3
PNEDA Part # SQJ504EP-T1_GE3
Description MOSFET N/P CHAN 40V POWERPAK SO-
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ504EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ504EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ504EP-T1_GE3, SQJ504EP-T1_GE3 Datasheet (Total Pages: 13, Size: 306.13 KB)
PDFSQJ504EP-T1_GE3 Datasheet Cover
SQJ504EP-T1_GE3 Datasheet Page 2 SQJ504EP-T1_GE3 Datasheet Page 3 SQJ504EP-T1_GE3 Datasheet Page 4 SQJ504EP-T1_GE3 Datasheet Page 5 SQJ504EP-T1_GE3 Datasheet Page 6 SQJ504EP-T1_GE3 Datasheet Page 7 SQJ504EP-T1_GE3 Datasheet Page 8 SQJ504EP-T1_GE3 Datasheet Page 9 SQJ504EP-T1_GE3 Datasheet Page 10 SQJ504EP-T1_GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQJ504EP-T1_GE3 Datasheet
  • where to find SQJ504EP-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQJ504EP-T1_GE3
  • SQJ504EP-T1_GE3 PDF Datasheet
  • SQJ504EP-T1_GE3 Stock

  • SQJ504EP-T1_GE3 Pinout
  • Datasheet SQJ504EP-T1_GE3
  • SQJ504EP-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQJ504EP-T1_GE3 Price
  • SQJ504EP-T1_GE3 Distributor

SQJ504EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN and P-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 8A, 10V, 17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V, 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1900pF @ 25V, 4600pF @ 25V
Power - Max34W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

The Products You May Be Interested In

SI4922BDY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A

Rds On (Max) @ Id, Vgs

16mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

2070pF @ 15V

Power - Max

3.1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO

FDG6313N

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

500mA

Rds On (Max) @ Id, Vgs

450mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 10V

Power - Max

300mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88 (SC-70-6)

SI1965DH-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1.3A

Rds On (Max) @ Id, Vgs

390mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 6V

Power - Max

1.25W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)

APTC90H12T2G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

4 N-Channel (H-Bridge)

FET Feature

Super Junction

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

30A

Rds On (Max) @ Id, Vgs

120mOhm @ 26A, 10V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

6800pF @ 100V

Power - Max

250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP2

Supplier Device Package

SP2

SP8M8TB

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A, 4.5A

Rds On (Max) @ Id, Vgs

30mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 10V

Power - Max

2W

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOP

Recently Sold

LTM8022EV#PBF

LTM8022EV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.8-10V 1A

ATSAM3X8EA-AU

ATSAM3X8EA-AU

Microchip Technology

IC MCU 32BIT 512KB FLASH 144LQFP

IRAMX16UP60B-2

IRAMX16UP60B-2

Infineon Technologies

IC PWR HYBRID 600V 16A SIP2

M30624FGPGP#U3C

M30624FGPGP#U3C

Renesas Electronics America

IC MCU 16BIT 256KB FLASH 100QFP

S202T01

S202T01

Sharp Microelectronics

SSR RELAY SPST-NO 2A 80-240V

SESD0402X1BN-0010-098

SESD0402X1BN-0010-098

Littelfuse

TVS DIODE 7V 10V 0402

ECS-327SMO-TR

ECS-327SMO-TR

ECS

XTAL OSC XO 32.7680KHZ CMOS SMD

PIC16F1786-I/SS

PIC16F1786-I/SS

Microchip Technology

IC MCU 8BIT 14KB FLASH 28SSOP

SC18IS600IBS,157

SC18IS600IBS,157

NXP

IC I2C BUS INTERFACE 24-HVQFN

DS1225AD-150IND

DS1225AD-150IND

Maxim Integrated

IC NVSRAM 64K PARALLEL 28EDIP

FDS4435BZ

FDS4435BZ

ON Semiconductor

MOSFET P-CH 30V 8.8A 8-SOIC

4608X-101-102LF

4608X-101-102LF

Bourns

RES ARRAY 7 RES 1K OHM 8SIP