Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ868EP-T1_GE3

SQJ868EP-T1_GE3

For Reference Only

Part Number SQJ868EP-T1_GE3
PNEDA Part # SQJ868EP-T1_GE3
Description MOSFET N-CH 40V 58A POWERPAKSOL
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,398
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ868EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ868EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJ868EP-T1_GE3, SQJ868EP-T1_GE3 Datasheet (Total Pages: 9, Size: 218.33 KB)
PDFSQJ868EP-T1_GE3 Datasheet Cover
SQJ868EP-T1_GE3 Datasheet Page 2 SQJ868EP-T1_GE3 Datasheet Page 3 SQJ868EP-T1_GE3 Datasheet Page 4 SQJ868EP-T1_GE3 Datasheet Page 5 SQJ868EP-T1_GE3 Datasheet Page 6 SQJ868EP-T1_GE3 Datasheet Page 7 SQJ868EP-T1_GE3 Datasheet Page 8 SQJ868EP-T1_GE3 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQJ868EP-T1_GE3 Datasheet
  • where to find SQJ868EP-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQJ868EP-T1_GE3
  • SQJ868EP-T1_GE3 PDF Datasheet
  • SQJ868EP-T1_GE3 Stock

  • SQJ868EP-T1_GE3 Pinout
  • Datasheet SQJ868EP-T1_GE3
  • SQJ868EP-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQJ868EP-T1_GE3 Price
  • SQJ868EP-T1_GE3 Distributor

SQJ868EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs7.35mOhm @ 14A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2450pF @ 20V
FET Feature-
Power Dissipation (Max)48W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

The Products You May Be Interested In

IPD135N03LGBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

SIHA240N60E-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

E

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

783pF @ 100V

FET Feature

-

Power Dissipation (Max)

31W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 Full Pack

Package / Case

TO-220-3 Full Pack

IRL3705NSTRLPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

89A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 46A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SSM3K56CT,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSVII-H

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

235mOhm @ 800mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

1nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

55pF @ 10V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

150°C (TA)

Mounting Type

Surface Mount

Supplier Device Package

CST3

Package / Case

3-XFDFN

IPP65R660CFDXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

660mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

615pF @ 100V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

DMG4468LFG-7

DMG4468LFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.62A DFN3030-8

PEX8796-AB80BI G

PEX8796-AB80BI G

Broadcom

PCI INT IC MULT-RT GEN 3 SW

LTM4630AEY#PBF

LTM4630AEY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.3V

PB5006-E3/45

PB5006-E3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT 1P 600V 45A PB

CDRH124NP-100MC

CDRH124NP-100MC

Sumida

FIXED IND 10UH 4.5A 28 MOHM SMD

AD8250ARMZ-R7

AD8250ARMZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

RUEF500

RUEF500

Littelfuse

PTC RESET FUSE 30V 5A RADIAL

PIC16F1705-I/P

PIC16F1705-I/P

Microchip Technology

IC MCU 8BIT 14KB FLASH 14DIP

93LC46C-I/SN

93LC46C-I/SN

Microchip Technology

IC EEPROM 1K SPI 3MHZ 8SOIC

4N32SM

4N32SM

ON Semiconductor

OPTOISO 4.17KV DARL W/BASE 6SMD

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

MLX90615SSG-DAA-000-TU

MLX90615SSG-DAA-000-TU

Melexis Technologies NV

SENSOR DGTL -40C-85C TO46-4