Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ910AEP-T1_GE3

SQJ910AEP-T1_GE3

For Reference Only

Part Number SQJ910AEP-T1_GE3
PNEDA Part # SQJ910AEP-T1_GE3
Description MOSFET 2 N-CH 30V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,462
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ910AEP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ910AEP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ910AEP-T1_GE3, SQJ910AEP-T1_GE3 Datasheet (Total Pages: 10, Size: 171.48 KB)
PDFSQJ910AEP-T1_GE3 Datasheet Cover
SQJ910AEP-T1_GE3 Datasheet Page 2 SQJ910AEP-T1_GE3 Datasheet Page 3 SQJ910AEP-T1_GE3 Datasheet Page 4 SQJ910AEP-T1_GE3 Datasheet Page 5 SQJ910AEP-T1_GE3 Datasheet Page 6 SQJ910AEP-T1_GE3 Datasheet Page 7 SQJ910AEP-T1_GE3 Datasheet Page 8 SQJ910AEP-T1_GE3 Datasheet Page 9 SQJ910AEP-T1_GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQJ910AEP-T1_GE3 Datasheet
  • where to find SQJ910AEP-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQJ910AEP-T1_GE3
  • SQJ910AEP-T1_GE3 PDF Datasheet
  • SQJ910AEP-T1_GE3 Stock

  • SQJ910AEP-T1_GE3 Pinout
  • Datasheet SQJ910AEP-T1_GE3
  • SQJ910AEP-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQJ910AEP-T1_GE3 Price
  • SQJ910AEP-T1_GE3 Distributor

SQJ910AEP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1869pF @ 15V
Power - Max48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

The Products You May Be Interested In

APTC60HM70RT3G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

4 N-Channel (H-Bridge) + Bridge Rectifier

FET Feature

Standard

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

39A

Rds On (Max) @ Id, Vgs

70mOhm @ 39A, 10V

Vgs(th) (Max) @ Id

3.9V @ 2.7mA

Gate Charge (Qg) (Max) @ Vgs

259nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

Power - Max

250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

-

Package / Case

SP3

Supplier Device Package

SP3

BSL308CL6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.3A, 2A

Rds On (Max) @ Id, Vgs

80mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2V @ 11µA

Gate Charge (Qg) (Max) @ Vgs

500nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

275pF @ 15V

Power - Max

500mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

PG-TSOP-6-6

US6M2GTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V, 20V

Current - Continuous Drain (Id) @ 25°C

1.5A, 1A

Rds On (Max) @ Id, Vgs

240mOhm @ 1.5A, 4.5V, 390mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 1mA, 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.2nC @ 4.5V, 2.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

80pF @ 10V, 150pF @ 10V

Power - Max

1W

Operating Temperature

150°C

Mounting Type

Surface Mount

Package / Case

6-SMD, Flat Leads

Supplier Device Package

TUMT6

BSC0911NDATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

18A, 30A

Rds On (Max) @ Id, Vgs

3.2mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 12V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Supplier Device Package

PG-TISON-8

SI4542DY

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6A

Rds On (Max) @ Id, Vgs

28mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 15V

Power - Max

1W

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

Recently Sold

LFXP2-17E-6FTN256I

LFXP2-17E-6FTN256I

Lattice Semiconductor Corporation

IC FPGA 201 I/O 256FTBGA

NFE31PT220R1E9L

NFE31PT220R1E9L

Murata

FILTER LC(T) 22PF SMD

IHLP1616BZERR47M11

IHLP1616BZERR47M11

Vishay Dale

FIXED IND 470NH 7A 16 MOHM SMD

ATXMEGA16A4U-AU

ATXMEGA16A4U-AU

Microchip Technology

IC MCU 8/16BIT 16KB FLASH 44TQFP

US6K1TR

US6K1TR

Rohm Semiconductor

MOSFET 2N-CH 30V 1.5A TUMT6

HSMG-C170

HSMG-C170

Broadcom

LED GREEN DIFFUSED CHIP SMD

AD8056ARZ

AD8056ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

AD420ARZ-32-REEL

AD420ARZ-32-REEL

Analog Devices

IC DAC 16BIT V OR A-OUT 24SOIC

MCP1725-3302E/MC

MCP1725-3302E/MC

Microchip Technology

IC REG LINEAR 3.3V 500MA 8DFN

MPXM2010GS

MPXM2010GS

NXP

SENS PRESSURE 1.45 PSI MAX MPAK

ATMEGA2561-16AI

ATMEGA2561-16AI

Microchip Technology

IC MCU 8BIT 256KB FLASH 64TQFP

APT2012SGC

APT2012SGC

Kingbright

LED GREEN CLEAR CHIP SMD