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SQJ940EP-T1_GE3

SQJ940EP-T1_GE3

For Reference Only

Part Number SQJ940EP-T1_GE3
PNEDA Part # SQJ940EP-T1_GE3
Description MOSFET 2N-CH 40V 15A PPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 47,622
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ940EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ940EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ940EP-T1_GE3, SQJ940EP-T1_GE3 Datasheet (Total Pages: 14, Size: 265.32 KB)
PDFSQJ940EP-T1_GE3 Datasheet Cover
SQJ940EP-T1_GE3 Datasheet Page 2 SQJ940EP-T1_GE3 Datasheet Page 3 SQJ940EP-T1_GE3 Datasheet Page 4 SQJ940EP-T1_GE3 Datasheet Page 5 SQJ940EP-T1_GE3 Datasheet Page 6 SQJ940EP-T1_GE3 Datasheet Page 7 SQJ940EP-T1_GE3 Datasheet Page 8 SQJ940EP-T1_GE3 Datasheet Page 9 SQJ940EP-T1_GE3 Datasheet Page 10 SQJ940EP-T1_GE3 Datasheet Page 11

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SQJ940EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds896pF @ 20V
Power - Max48W, 43W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

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