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SQJ946EP-T1_GE3

SQJ946EP-T1_GE3

For Reference Only

Part Number SQJ946EP-T1_GE3
PNEDA Part # SQJ946EP-T1_GE3
Description MOSFET 2 N-CH 40V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,392
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ946EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ946EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ946EP-T1_GE3, SQJ946EP-T1_GE3 Datasheet (Total Pages: 7, Size: 159.94 KB)
PDFSQJ946EP-T1_GE3 Datasheet Cover
SQJ946EP-T1_GE3 Datasheet Page 2 SQJ946EP-T1_GE3 Datasheet Page 3 SQJ946EP-T1_GE3 Datasheet Page 4 SQJ946EP-T1_GE3 Datasheet Page 5 SQJ946EP-T1_GE3 Datasheet Page 6 SQJ946EP-T1_GE3 Datasheet Page 7

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SQJ946EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Rds On (Max) @ Id, Vgs33mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 25V
Power - Max27W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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Input Capacitance (Ciss) (Max) @ Vds

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Input Capacitance (Ciss) (Max) @ Vds

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TrenchFET®

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Logic Level Gate

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Current - Continuous Drain (Id) @ 25°C

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Input Capacitance (Ciss) (Max) @ Vds

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Mounting Type

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Supplier Device Package

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