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SQJ980AEP-T1_GE3

SQJ980AEP-T1_GE3

For Reference Only

Part Number SQJ980AEP-T1_GE3
PNEDA Part # SQJ980AEP-T1_GE3
Description MOSFET 2 N-CH 75V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ980AEP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ980AEP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ980AEP-T1_GE3, SQJ980AEP-T1_GE3 Datasheet (Total Pages: 10, Size: 738.52 KB)
PDFSQJ980AEP-T1_GE3 Datasheet Cover
SQJ980AEP-T1_GE3 Datasheet Page 2 SQJ980AEP-T1_GE3 Datasheet Page 3 SQJ980AEP-T1_GE3 Datasheet Page 4 SQJ980AEP-T1_GE3 Datasheet Page 5 SQJ980AEP-T1_GE3 Datasheet Page 6 SQJ980AEP-T1_GE3 Datasheet Page 7 SQJ980AEP-T1_GE3 Datasheet Page 8 SQJ980AEP-T1_GE3 Datasheet Page 9 SQJ980AEP-T1_GE3 Datasheet Page 10

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SQJ980AEP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 35V
Power - Max34W (Tc)
Operating Temperature-55°C ~ 175°C (TA)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual

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