Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQJ990EP-T1_GE3

SQJ990EP-T1_GE3

For Reference Only

Part Number SQJ990EP-T1_GE3
PNEDA Part # SQJ990EP-T1_GE3
Description MOSFET 2 N-CH 100V POWERPAK SO8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJ990EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJ990EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJ990EP-T1_GE3, SQJ990EP-T1_GE3 Datasheet (Total Pages: 10, Size: 313.13 KB)
PDFSQJ990EP-T1_GE3 Datasheet Cover
SQJ990EP-T1_GE3 Datasheet Page 2 SQJ990EP-T1_GE3 Datasheet Page 3 SQJ990EP-T1_GE3 Datasheet Page 4 SQJ990EP-T1_GE3 Datasheet Page 5 SQJ990EP-T1_GE3 Datasheet Page 6 SQJ990EP-T1_GE3 Datasheet Page 7 SQJ990EP-T1_GE3 Datasheet Page 8 SQJ990EP-T1_GE3 Datasheet Page 9 SQJ990EP-T1_GE3 Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQJ990EP-T1_GE3 Datasheet
  • where to find SQJ990EP-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQJ990EP-T1_GE3
  • SQJ990EP-T1_GE3 PDF Datasheet
  • SQJ990EP-T1_GE3 Stock

  • SQJ990EP-T1_GE3 Pinout
  • Datasheet SQJ990EP-T1_GE3
  • SQJ990EP-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQJ990EP-T1_GE3 Price
  • SQJ990EP-T1_GE3 Distributor

SQJ990EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 6A, 10V, 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1390pF @ 25V, 650pF @ 25V
Power - Max48W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8 Dual
Supplier Device PackagePowerPAK® SO-8 Dual Asymmetric

The Products You May Be Interested In

NTMD2C02R2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.2A, 3.4A

Rds On (Max) @ Id, Vgs

43mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 10V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

SIS902DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

4A

Rds On (Max) @ Id, Vgs

186mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

175pF @ 38V

Power - Max

15.4W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

PowerPAK® 1212-8 Dual

Supplier Device Package

PowerPAK® 1212-8 Dual

ALD114904SAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Depletion Mode

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

12mA, 3mA

Rds On (Max) @ Id, Vgs

500Ohm @ 3.6V

Vgs(th) (Max) @ Id

360mV @ 1µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

2.5pF @ 5V

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Standard

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

100mA

Rds On (Max) @ Id, Vgs

3Ohm @ 10mA, 4V

Vgs(th) (Max) @ Id

1.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

9.3pF @ 3V

Power - Max

200mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

FDS4885C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N and P-Channel

FET Feature

Standard

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

7.5A, 6A

Rds On (Max) @ Id, Vgs

22mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 20V

Power - Max

900mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

Recently Sold

24LC256-I/ST

24LC256-I/ST

Microchip Technology

IC EEPROM 256K I2C 8TSSOP

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812

PIC18F6520-I/PT

PIC18F6520-I/PT

Microchip Technology

IC MCU 8BIT 32KB FLASH 64TQFP

AD22037Z

AD22037Z

Analog Devices

ACCELEROMETER 18G ANALOG 8CLCC

1526GLF

1526GLF

IDT, Integrated Device Technology

IC VIDEO CLK SYNTHESIZER 16TSSOP

SMAZ18-13-F

SMAZ18-13-F

Diodes Incorporated

DIODE ZENER 18V 1W SMA

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

3266W-1-503

3266W-1-503

Bourns

TRIMMER 50K OHM 0.25W PC PIN TOP

ADM232AARN

ADM232AARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

LAN8710AI-EZK

LAN8710AI-EZK

Microchip Technology

IC TRANSCEIVER FULL 4/4 32QFN

ABLS2-12.000MHZ-D4Y-T

ABLS2-12.000MHZ-D4Y-T

Abracon

CRYSTAL 12.0000MHZ 18PF SMD