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SQJA70EP-T1_GE3

SQJA70EP-T1_GE3

For Reference Only

Part Number SQJA70EP-T1_GE3
PNEDA Part # SQJA70EP-T1_GE3
Description MOSFET N-CH 100V 14.7A SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 5,274
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJA70EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJA70EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJA70EP-T1_GE3, SQJA70EP-T1_GE3 Datasheet (Total Pages: 10, Size: 277.32 KB)
PDFSQJA70EP-T1_GE3 Datasheet Cover
SQJA70EP-T1_GE3 Datasheet Page 2 SQJA70EP-T1_GE3 Datasheet Page 3 SQJA70EP-T1_GE3 Datasheet Page 4 SQJA70EP-T1_GE3 Datasheet Page 5 SQJA70EP-T1_GE3 Datasheet Page 6 SQJA70EP-T1_GE3 Datasheet Page 7 SQJA70EP-T1_GE3 Datasheet Page 8 SQJA70EP-T1_GE3 Datasheet Page 9 SQJA70EP-T1_GE3 Datasheet Page 10

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SQJA70EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C14.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs95mOhm @ 4A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
FET Feature-
Power Dissipation (Max)27W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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