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SQJA76EP-T1_GE3

SQJA76EP-T1_GE3

For Reference Only

Part Number SQJA76EP-T1_GE3
PNEDA Part # SQJA76EP-T1_GE3
Description MOSFET N-CHAN 40V POWERPAK SO-8L
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJA76EP-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJA76EP-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJA76EP-T1_GE3, SQJA76EP-T1_GE3 Datasheet (Total Pages: 9, Size: 232.72 KB)
PDFSQJA76EP-T1_GE3 Datasheet Cover
SQJA76EP-T1_GE3 Datasheet Page 2 SQJA76EP-T1_GE3 Datasheet Page 3 SQJA76EP-T1_GE3 Datasheet Page 4 SQJA76EP-T1_GE3 Datasheet Page 5 SQJA76EP-T1_GE3 Datasheet Page 6 SQJA76EP-T1_GE3 Datasheet Page 7 SQJA76EP-T1_GE3 Datasheet Page 8 SQJA76EP-T1_GE3 Datasheet Page 9

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SQJA76EP-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5250pF @ 25V
FET Feature-
Power Dissipation (Max)68W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / Case8-PowerTDFN

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