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SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

For Reference Only

Part Number SQJQ402E-T1_GE3
PNEDA Part # SQJQ402E-T1_GE3
Description MOSFET N-CH 40V 200A POWERPAK8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 23,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJQ402E-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJQ402E-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQJQ402E-T1_GE3, SQJQ402E-T1_GE3 Datasheet (Total Pages: 9, Size: 165.79 KB)
PDFSQJQ402E-T1_GE3 Datasheet Cover
SQJQ402E-T1_GE3 Datasheet Page 2 SQJQ402E-T1_GE3 Datasheet Page 3 SQJQ402E-T1_GE3 Datasheet Page 4 SQJQ402E-T1_GE3 Datasheet Page 5 SQJQ402E-T1_GE3 Datasheet Page 6 SQJQ402E-T1_GE3 Datasheet Page 7 SQJQ402E-T1_GE3 Datasheet Page 8 SQJQ402E-T1_GE3 Datasheet Page 9

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SQJQ402E-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13500pF @ 20V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 8 x 8
Package / CasePowerPAK® 8 x 8 Single

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