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SQJQ900E-T1_GE3

SQJQ900E-T1_GE3

For Reference Only

Part Number SQJQ900E-T1_GE3
PNEDA Part # SQJQ900E-T1_GE3
Description MOSFET 2 N-CH 40V POWERPAK8X8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,986
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQJQ900E-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQJQ900E-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQJQ900E-T1_GE3, SQJQ900E-T1_GE3 Datasheet (Total Pages: 10, Size: 281.35 KB)
PDFSQJQ900E-T1_GE3 Datasheet Cover
SQJQ900E-T1_GE3 Datasheet Page 2 SQJQ900E-T1_GE3 Datasheet Page 3 SQJQ900E-T1_GE3 Datasheet Page 4 SQJQ900E-T1_GE3 Datasheet Page 5 SQJQ900E-T1_GE3 Datasheet Page 6 SQJQ900E-T1_GE3 Datasheet Page 7 SQJQ900E-T1_GE3 Datasheet Page 8 SQJQ900E-T1_GE3 Datasheet Page 9 SQJQ900E-T1_GE3 Datasheet Page 10

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SQJQ900E-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs3.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds5900pF @ 20V
Power - Max75W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 8 x 8 Dual
Supplier Device PackagePowerPAK® 8 x 8 Dual

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