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SQM25N15-52_GE3

SQM25N15-52_GE3

For Reference Only

Part Number SQM25N15-52_GE3
PNEDA Part # SQM25N15-52_GE3
Description MOSFET N-CH 150V 25A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQM25N15-52_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQM25N15-52_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQM25N15-52_GE3, SQM25N15-52_GE3 Datasheet (Total Pages: 10, Size: 199.11 KB)
PDFSQM25N15-52_GE3 Datasheet Cover
SQM25N15-52_GE3 Datasheet Page 2 SQM25N15-52_GE3 Datasheet Page 3 SQM25N15-52_GE3 Datasheet Page 4 SQM25N15-52_GE3 Datasheet Page 5 SQM25N15-52_GE3 Datasheet Page 6 SQM25N15-52_GE3 Datasheet Page 7 SQM25N15-52_GE3 Datasheet Page 8 SQM25N15-52_GE3 Datasheet Page 9 SQM25N15-52_GE3 Datasheet Page 10

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SQM25N15-52_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2360pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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