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SQM85N15-19_GE3

SQM85N15-19_GE3

For Reference Only

Part Number SQM85N15-19_GE3
PNEDA Part # SQM85N15-19_GE3
Description MOSFET N-CH 150V 85A TO263
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 17,028
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQM85N15-19_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQM85N15-19_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQM85N15-19_GE3, SQM85N15-19_GE3 Datasheet (Total Pages: 10, Size: 208.09 KB)
PDFSQM85N15-19_GE3 Datasheet Cover
SQM85N15-19_GE3 Datasheet Page 2 SQM85N15-19_GE3 Datasheet Page 3 SQM85N15-19_GE3 Datasheet Page 4 SQM85N15-19_GE3 Datasheet Page 5 SQM85N15-19_GE3 Datasheet Page 6 SQM85N15-19_GE3 Datasheet Page 7 SQM85N15-19_GE3 Datasheet Page 8 SQM85N15-19_GE3 Datasheet Page 9 SQM85N15-19_GE3 Datasheet Page 10

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SQM85N15-19_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs19mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6285pF @ 25V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Current - Continuous Drain (Id) @ 25°C

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Drive Voltage (Max Rds On, Min Rds On)

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