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SQP60N06-15_GE3

SQP60N06-15_GE3

For Reference Only

Part Number SQP60N06-15_GE3
PNEDA Part # SQP60N06-15_GE3
Description MOSFET N-CH 60V 56A TO220AB
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 16,872
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 21 - May 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQP60N06-15_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQP60N06-15_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQP60N06-15_GE3, SQP60N06-15_GE3 Datasheet (Total Pages: 8, Size: 129.09 KB)
PDFSQP60N06-15_GE3 Datasheet Cover
SQP60N06-15_GE3 Datasheet Page 2 SQP60N06-15_GE3 Datasheet Page 3 SQP60N06-15_GE3 Datasheet Page 4 SQP60N06-15_GE3 Datasheet Page 5 SQP60N06-15_GE3 Datasheet Page 6 SQP60N06-15_GE3 Datasheet Page 7 SQP60N06-15_GE3 Datasheet Page 8

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SQP60N06-15_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2480pF @ 25V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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