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SQR50N04-3M8_GE3

SQR50N04-3M8_GE3

For Reference Only

Part Number SQR50N04-3M8_GE3
PNEDA Part # SQR50N04-3M8_GE3
Description MOSFET N-CHANNEL 40V 50A DPAK
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,142
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQR50N04-3M8_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQR50N04-3M8_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQR50N04-3M8_GE3, SQR50N04-3M8_GE3 Datasheet (Total Pages: 8, Size: 132.97 KB)
PDFSQR50N04-3M8_GE3 Datasheet Cover
SQR50N04-3M8_GE3 Datasheet Page 2 SQR50N04-3M8_GE3 Datasheet Page 3 SQR50N04-3M8_GE3 Datasheet Page 4 SQR50N04-3M8_GE3 Datasheet Page 5 SQR50N04-3M8_GE3 Datasheet Page 6 SQR50N04-3M8_GE3 Datasheet Page 7 SQR50N04-3M8_GE3 Datasheet Page 8

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SQR50N04-3M8_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6700pF @ 25V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-4, DPak (3 Leads + Tab)

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