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SQS411ENW-T1_GE3

SQS411ENW-T1_GE3

For Reference Only

Part Number SQS411ENW-T1_GE3
PNEDA Part # SQS411ENW-T1_GE3
Description MOSFET P-CH 40V PPAK 1212-8W
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 26,082
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS411ENW-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS411ENW-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS411ENW-T1_GE3, SQS411ENW-T1_GE3 Datasheet (Total Pages: 9, Size: 249.55 KB)
PDFSQS411ENW-T1_GE3 Datasheet Cover
SQS411ENW-T1_GE3 Datasheet Page 2 SQS411ENW-T1_GE3 Datasheet Page 3 SQS411ENW-T1_GE3 Datasheet Page 4 SQS411ENW-T1_GE3 Datasheet Page 5 SQS411ENW-T1_GE3 Datasheet Page 6 SQS411ENW-T1_GE3 Datasheet Page 7 SQS411ENW-T1_GE3 Datasheet Page 8 SQS411ENW-T1_GE3 Datasheet Page 9

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SQS411ENW-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs27.3mOhm @ 8A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3191pF @ 25V
FET Feature-
Power Dissipation (Max)53.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8W
Package / CasePowerPAK® 1212-8W

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