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SQS420EN-T1_GE3

SQS420EN-T1_GE3

For Reference Only

Part Number SQS420EN-T1_GE3
PNEDA Part # SQS420EN-T1_GE3
Description MOSFET N-CH 20V 8A 1212-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 2,718
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS420EN-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS420EN-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS420EN-T1_GE3, SQS420EN-T1_GE3 Datasheet (Total Pages: 13, Size: 1,120.51 KB)
PDFSQS420EN-T1_GE3 Datasheet Cover
SQS420EN-T1_GE3 Datasheet Page 2 SQS420EN-T1_GE3 Datasheet Page 3 SQS420EN-T1_GE3 Datasheet Page 4 SQS420EN-T1_GE3 Datasheet Page 5 SQS420EN-T1_GE3 Datasheet Page 6 SQS420EN-T1_GE3 Datasheet Page 7 SQS420EN-T1_GE3 Datasheet Page 8 SQS420EN-T1_GE3 Datasheet Page 9 SQS420EN-T1_GE3 Datasheet Page 10 SQS420EN-T1_GE3 Datasheet Page 11

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SQS420EN-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs28mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds490pF @ 10V
FET Feature-
Power Dissipation (Max)18W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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