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SQS460EN-T1_GE3

SQS460EN-T1_GE3

For Reference Only

Part Number SQS460EN-T1_GE3
PNEDA Part # SQS460EN-T1_GE3
Description MOSFET N-CH 60V 8A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,708
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS460EN-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS460EN-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS460EN-T1_GE3, SQS460EN-T1_GE3 Datasheet (Total Pages: 14, Size: 642.09 KB)
PDFSQS460EN-T1_GE3 Datasheet Cover
SQS460EN-T1_GE3 Datasheet Page 2 SQS460EN-T1_GE3 Datasheet Page 3 SQS460EN-T1_GE3 Datasheet Page 4 SQS460EN-T1_GE3 Datasheet Page 5 SQS460EN-T1_GE3 Datasheet Page 6 SQS460EN-T1_GE3 Datasheet Page 7 SQS460EN-T1_GE3 Datasheet Page 8 SQS460EN-T1_GE3 Datasheet Page 9 SQS460EN-T1_GE3 Datasheet Page 10 SQS460EN-T1_GE3 Datasheet Page 11

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SQS460EN-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds755pF @ 25V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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