Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SQS460EN-T1_GE3

SQS460EN-T1_GE3

For Reference Only

Part Number SQS460EN-T1_GE3
PNEDA Part # SQS460EN-T1_GE3
Description MOSFET N-CH 60V 8A
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,708
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 22 - Apr 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS460EN-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS460EN-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS460EN-T1_GE3, SQS460EN-T1_GE3 Datasheet (Total Pages: 14, Size: 642.09 KB)
PDFSQS460EN-T1_GE3 Datasheet Cover
SQS460EN-T1_GE3 Datasheet Page 2 SQS460EN-T1_GE3 Datasheet Page 3 SQS460EN-T1_GE3 Datasheet Page 4 SQS460EN-T1_GE3 Datasheet Page 5 SQS460EN-T1_GE3 Datasheet Page 6 SQS460EN-T1_GE3 Datasheet Page 7 SQS460EN-T1_GE3 Datasheet Page 8 SQS460EN-T1_GE3 Datasheet Page 9 SQS460EN-T1_GE3 Datasheet Page 10 SQS460EN-T1_GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SQS460EN-T1_GE3 Datasheet
  • where to find SQS460EN-T1_GE3
  • Vishay Siliconix

  • Vishay Siliconix SQS460EN-T1_GE3
  • SQS460EN-T1_GE3 PDF Datasheet
  • SQS460EN-T1_GE3 Stock

  • SQS460EN-T1_GE3 Pinout
  • Datasheet SQS460EN-T1_GE3
  • SQS460EN-T1_GE3 Supplier

  • Vishay Siliconix Distributor
  • SQS460EN-T1_GE3 Price
  • SQS460EN-T1_GE3 Distributor

SQS460EN-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds755pF @ 25V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

157nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™

IPP12CN10LGXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

69A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 69A, 10V

Vgs(th) (Max) @ Id

2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5600pF @ 50V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

AON7380

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

AlphaMOS

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

825pF @ 15V

FET Feature

-

Power Dissipation (Max)

4.1W (Ta), 24W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (3x3)

Package / Case

8-PowerVDFN

IRF6665TR1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4.2A (Ta), 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

62mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

13nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ SH

Package / Case

DirectFET™ Isometric SH

DMNH4011SPS-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

13A (Ta), 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1405pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

Recently Sold

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

VLMRGB343-ST-UV-RS

VLMRGB343-ST-UV-RS

Vishay Semiconductor Opto Division

LED RGB 4PLCC SMD

A6B595KLWTR-T

A6B595KLWTR-T

Allegro MicroSystems, LLC

IC PWR DRVR 8BIT ADDRESS 20SOIC

SR1LARU

SR1LARU

STMicroelectronics

IC SMART RESET 4PIN 6.0S 6UDFN

BAV70

BAV70

Panasonic Electronic Components

DIODE ARRAY GP 80V 200MA SOT23-3

M2GL005-TQ144I

M2GL005-TQ144I

Microsemi

IC FPGA 84 I/O 144TQFP

ISL83490IBZ-T

ISL83490IBZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER FULL 1/1 8SOIC

VY1222M47Y5UQ63V0

VY1222M47Y5UQ63V0

Vishay BC Components

CAP CER 2200PF 760VAC Y5U RADIAL

HSMF-C165

HSMF-C165

Broadcom

LED GREEN/RED DIFFUSED 0603 SMD

EPM7128SQC100-10N

EPM7128SQC100-10N

Intel

IC CPLD 128MC 10NS 100QFP

BZV55C4V7

BZV55C4V7

Microsemi

DIODE ZENER 4.7V DO213AA

AFT27S010NT1

AFT27S010NT1

NXP

FET RF NCH 65V 2700MHZ PLD1.5W