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SQS944ENW-T1_GE3

SQS944ENW-T1_GE3

For Reference Only

Part Number SQS944ENW-T1_GE3
PNEDA Part # SQS944ENW-T1_GE3
Description MOSFET N-CHAN 40V
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,318
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS944ENW-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS944ENW-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Arrays
Datasheet
SQS944ENW-T1_GE3, SQS944ENW-T1_GE3 Datasheet (Total Pages: 11, Size: 595.2 KB)
PDFSQS944ENW-T1_GE3 Datasheet Cover
SQS944ENW-T1_GE3 Datasheet Page 2 SQS944ENW-T1_GE3 Datasheet Page 3 SQS944ENW-T1_GE3 Datasheet Page 4 SQS944ENW-T1_GE3 Datasheet Page 5 SQS944ENW-T1_GE3 Datasheet Page 6 SQS944ENW-T1_GE3 Datasheet Page 7 SQS944ENW-T1_GE3 Datasheet Page 8 SQS944ENW-T1_GE3 Datasheet Page 9 SQS944ENW-T1_GE3 Datasheet Page 10 SQS944ENW-T1_GE3 Datasheet Page 11

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SQS944ENW-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds615pF @ 25V
Power - Max27.8W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Package / CasePowerPAK® 1212-8W Dual
Supplier Device PackagePowerPAK® 1212-8W Dual

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