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SQV120N06-4M7L_GE3

SQV120N06-4M7L_GE3

For Reference Only

Part Number SQV120N06-4M7L_GE3
PNEDA Part # SQV120N06-4M7L_GE3
Description MOSFET N-CH 60V 120A TO262-3
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 3,492
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQV120N06-4M7L_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQV120N06-4M7L_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQV120N06-4M7L_GE3, SQV120N06-4M7L_GE3 Datasheet (Total Pages: 8, Size: 174.67 KB)
PDFSQV120N06-4M7L_GE3 Datasheet Cover
SQV120N06-4M7L_GE3 Datasheet Page 2 SQV120N06-4M7L_GE3 Datasheet Page 3 SQV120N06-4M7L_GE3 Datasheet Page 4 SQV120N06-4M7L_GE3 Datasheet Page 5 SQV120N06-4M7L_GE3 Datasheet Page 6 SQV120N06-4M7L_GE3 Datasheet Page 7 SQV120N06-4M7L_GE3 Datasheet Page 8

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SQV120N06-4M7L_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8800pF @ 25V
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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