SSM6H19NU,LF
For Reference Only
| Part Number | SSM6H19NU,LF |
| PNEDA Part # | SSM6H19NU-LF |
| Description | MOSFET N-CH 40V 2A 6UDFN |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 4,194 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SSM6H19NU Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
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| Mfr. Part Number | SSM6H19NU,LF |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SSM6H19NU Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVII-H |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 1A, 8V |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.2V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-UDFN (2x2) |
| Package / Case | 6-UDFN Exposed Pad |
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