Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSM6J402TU,LF

SSM6J402TU,LF

For Reference Only

Part Number SSM6J402TU,LF
PNEDA Part # SSM6J402TU-LF
Description SMALL SIGNAL MOSFET P-CH VDSS-30
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,834
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM6J402TU Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM6J402TU,LF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSM6J402TU,LF Datasheet
  • where to find SSM6J402TU,LF
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage SSM6J402TU,LF
  • SSM6J402TU,LF PDF Datasheet
  • SSM6J402TU,LF Stock

  • SSM6J402TU,LF Pinout
  • Datasheet SSM6J402TU,LF
  • SSM6J402TU,LF Supplier

  • Toshiba Semiconductor and Storage Distributor
  • SSM6J402TU,LF Price
  • SSM6J402TU,LF Distributor

SSM6J402TU Specifications

ManufacturerToshiba Semiconductor and Storage
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

BSS127SSN-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

50mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

160Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.08nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

21.8pF @ 25V

FET Feature

-

Power Dissipation (Max)

610mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59

Package / Case

TO-236-3, SC-59, SOT-23-3

IPD65R1K4C6ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C6

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

3.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 100V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXTP12N50P

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1830pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFI9530N

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

300mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

860pF @ 25V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB Full-Pak

Package / Case

TO-220-3 Full Pack

FQA17N40

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

17.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 8.6A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2300pF @ 25V

FET Feature

-

Power Dissipation (Max)

190W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Recently Sold

RCLAMP0524P.TCT

RCLAMP0524P.TCT

Semtech

TVS DIODE 5V 15V SLP2510P8

BZA408B,125

BZA408B,125

Nexperia

TVS DIODE 5V 6TSOP

EPM2210F324C5N

EPM2210F324C5N

Intel

IC CPLD 1700MC 7NS 324FBGA

MAX238CWG

MAX238CWG

Maxim Integrated

IC TRANSCEIVER FULL 4/4 24SOIC

CAT4139TD-GT3

CAT4139TD-GT3

ON Semiconductor

IC LED DRIVER RGLTR DIM TSOT23-5

NC7SZ04P5X

NC7SZ04P5X

ON Semiconductor

IC INVERTER 1CH 1-INP SC70-5

BR24T128-W

BR24T128-W

Rohm Semiconductor

IC EEPROM 128K I2C 8-DIP-T

PVG612ASPBF

PVG612ASPBF

Infineon Technologies

SSR RELAY SPST-NO 2A 0-60V

LTST-C171KRKT

LTST-C171KRKT

Lite-On Inc.

LED RED CLEAR SMD

FSA2567MPX

FSA2567MPX

ON Semiconductor

IC SWITCH 4PDT 16MLP

C8051F126-GQR

C8051F126-GQR

Silicon Labs

IC MCU 8BIT 128KB FLASH 100TQFP

SMAJ36A

SMAJ36A

Bourns

TVS DIODE 36V 58.1V SMA