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SSM6J53FE(TE85L,F)

SSM6J53FE(TE85L,F)

For Reference Only

Part Number SSM6J53FE(TE85L,F)
PNEDA Part # SSM6J53FE-TE85L-F
Description MOSFET P-CH 20V 1.8A ES6
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSM6J53FE(TE85L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberSSM6J53FE(TE85L,F)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SSM6J53FE(TE85L, SSM6J53FE(TE85L Datasheet (Total Pages: 6, Size: 173.64 KB)
PDFSSM6J53FE(TE85L Datasheet Cover
SSM6J53FE(TE85L Datasheet Page 2 SSM6J53FE(TE85L Datasheet Page 3 SSM6J53FE(TE85L Datasheet Page 4 SSM6J53FE(TE85L Datasheet Page 5 SSM6J53FE(TE85L Datasheet Page 6

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SSM6J53FE(TE85L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 2.5V
Rds On (Max) @ Id, Vgs136mOhm @ 1A, 2.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10.6nC @ 4V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds568pF @ 10V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageES6 (1.6x1.6)
Package / CaseSOT-563, SOT-666

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