SSR1N60BTM-WS
For Reference Only
| Part Number | SSR1N60BTM-WS |
| PNEDA Part # | SSR1N60BTM-WS |
| Description | MOSFET N-CH 600V 0.9A DPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,518 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SSR1N60BTM-WS Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | SSR1N60BTM-WS |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SSR1N60BTM-WS Datasheet
- where to find SSR1N60BTM-WS
- ON Semiconductor
- ON Semiconductor SSR1N60BTM-WS
- SSR1N60BTM-WS PDF Datasheet
- SSR1N60BTM-WS Stock
- SSR1N60BTM-WS Pinout
- Datasheet SSR1N60BTM-WS
- SSR1N60BTM-WS Supplier
- ON Semiconductor Distributor
- SSR1N60BTM-WS Price
- SSR1N60BTM-WS Distributor
SSR1N60BTM-WS Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 450mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.7nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 215pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 43A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 43A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7280pF @ 75V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 Full Pack |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 7.2mOhm @ 37A, 10V Vgs(th) (Max) @ Id 3.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 40V FET Feature - Power Dissipation (Max) 2.5W (Ta), 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TDSON-8-7 Package / Case 8-PowerTDFN |
Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 13.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 200mOhm @ 7A, 5V Vgs(th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V FET Feature - Power Dissipation (Max) 95W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.31nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V FET Feature - Power Dissipation (Max) 370mW (Ta), 2.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN0606-3 (SOT8001) Package / Case 3-XFDFN |
Manufacturer Infineon Technologies Series TEMPFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 49V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id 2V @ 240µA Gate Charge (Qg) (Max) @ Vgs 232nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 300W (Tc) Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package P-TO220-7-230 Package / Case TO-220-7 |
