Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSR1N60BTM-WS

SSR1N60BTM-WS

For Reference Only

Part Number SSR1N60BTM-WS
PNEDA Part # SSR1N60BTM-WS
Description MOSFET N-CH 600V 0.9A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,518
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSR1N60BTM-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSSR1N60BTM-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SSR1N60BTM-WS, SSR1N60BTM-WS Datasheet (Total Pages: 9, Size: 705.8 KB)
PDFSSR1N60BTM_F080 Datasheet Cover
SSR1N60BTM_F080 Datasheet Page 2 SSR1N60BTM_F080 Datasheet Page 3 SSR1N60BTM_F080 Datasheet Page 4 SSR1N60BTM_F080 Datasheet Page 5 SSR1N60BTM_F080 Datasheet Page 6 SSR1N60BTM_F080 Datasheet Page 7 SSR1N60BTM_F080 Datasheet Page 8 SSR1N60BTM_F080 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSR1N60BTM-WS Datasheet
  • where to find SSR1N60BTM-WS
  • ON Semiconductor

  • ON Semiconductor SSR1N60BTM-WS
  • SSR1N60BTM-WS PDF Datasheet
  • SSR1N60BTM-WS Stock

  • SSR1N60BTM-WS Pinout
  • Datasheet SSR1N60BTM-WS
  • SSR1N60BTM-WS Supplier

  • ON Semiconductor Distributor
  • SSR1N60BTM-WS Price
  • SSR1N60BTM-WS Distributor

SSR1N60BTM-WS Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds215pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

BSC072N08NS5ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

74A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

7.2mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

3.8V @ 36µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2100pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-7

Package / Case

8-PowerTDFN

PMH600UNEH

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

620mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

0.95V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.31nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

21.3pF @ 10V

FET Feature

-

Power Dissipation (Max)

370mW (Ta), 2.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DFN0606-3 (SOT8001)

Package / Case

3-XFDFN

BTS282Z E3230

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TEMPFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

49V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.5mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

2V @ 240µA

Gate Charge (Qg) (Max) @ Vgs

232nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 25V

FET Feature

Temperature Sensing Diode

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

P-TO220-7-230

Package / Case

TO-220-7

FQA8N100C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.45Ohm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3220pF @ 25V

FET Feature

-

Power Dissipation (Max)

225W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

FQD5N60CTF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

2.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

670pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 49W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2

TCS3200D-TR

TCS3200D-TR

ams

IC COLOR SENSOR LIGHT-FREQ 8SOIC

ISL9205IRZ-T

ISL9205IRZ-T

Renesas Electronics America Inc.

IC CHRGR LI-ION SGL 4.2V 16-QFN

DECB33J681KC4B

DECB33J681KC4B

Murata

CAP CER 680PF 6.3KV RADIAL

ASDXRRX005NDAA5

ASDXRRX005NDAA5

Honeywell Sensing and Productivity Solutions

SENSOR PRESSURE DIFF 5"" H2O 8DIP

RB551V-30-TP

RB551V-30-TP

Micro Commercial Co

DIODE SCHOTTKY 20V 500MA SOD323

LTC3854EMSE#PBF

LTC3854EMSE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 12MSOP

UPD70F3747GB-GAH-AX

UPD70F3747GB-GAH-AX

Renesas Electronics America

IC MCU 32BIT 128KB FLASH 64LQFP

EEU-ED2G220

EEU-ED2G220

Panasonic Electronic Components

CAP ALUM 22UF 20% 400V RADIAL

MAX3232CUE+T

MAX3232CUE+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

ACPL-M21L-500E

ACPL-M21L-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 5SO

AO3407A

AO3407A

Alpha & Omega Semiconductor

MOSFET P-CH 30V 4.3A SOT23