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SSU1N60BTU-WS

SSU1N60BTU-WS

For Reference Only

Part Number SSU1N60BTU-WS
PNEDA Part # SSU1N60BTU-WS
Description MOSFET N-CH 600V 0.9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 18 - Apr 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSU1N60BTU-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSSU1N60BTU-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SSU1N60BTU-WS, SSU1N60BTU-WS Datasheet (Total Pages: 9, Size: 705.8 KB)
PDFSSR1N60BTM_F080 Datasheet Cover
SSR1N60BTM_F080 Datasheet Page 2 SSR1N60BTM_F080 Datasheet Page 3 SSR1N60BTM_F080 Datasheet Page 4 SSR1N60BTM_F080 Datasheet Page 5 SSR1N60BTM_F080 Datasheet Page 6 SSR1N60BTM_F080 Datasheet Page 7 SSR1N60BTM_F080 Datasheet Page 8 SSR1N60BTM_F080 Datasheet Page 9

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SSU1N60BTU-WS Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds215pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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