Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SSU1N60BTU-WS

SSU1N60BTU-WS

For Reference Only

Part Number SSU1N60BTU-WS
PNEDA Part # SSU1N60BTU-WS
Description MOSFET N-CH 600V 0.9A IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SSU1N60BTU-WS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberSSU1N60BTU-WS
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SSU1N60BTU-WS, SSU1N60BTU-WS Datasheet (Total Pages: 9, Size: 705.8 KB)
PDFSSR1N60BTM_F080 Datasheet Cover
SSR1N60BTM_F080 Datasheet Page 2 SSR1N60BTM_F080 Datasheet Page 3 SSR1N60BTM_F080 Datasheet Page 4 SSR1N60BTM_F080 Datasheet Page 5 SSR1N60BTM_F080 Datasheet Page 6 SSR1N60BTM_F080 Datasheet Page 7 SSR1N60BTM_F080 Datasheet Page 8 SSR1N60BTM_F080 Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SSU1N60BTU-WS Datasheet
  • where to find SSU1N60BTU-WS
  • ON Semiconductor

  • ON Semiconductor SSU1N60BTU-WS
  • SSU1N60BTU-WS PDF Datasheet
  • SSU1N60BTU-WS Stock

  • SSU1N60BTU-WS Pinout
  • Datasheet SSU1N60BTU-WS
  • SSU1N60BTU-WS Supplier

  • ON Semiconductor Distributor
  • SSU1N60BTU-WS Price
  • SSU1N60BTU-WS Distributor

SSU1N60BTU-WS Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.7nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds215pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

SUD50N04-05L-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

115A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

135nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5600pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

CPMF-1200-S080B

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

Z-FET™

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

50A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

110mOhm @ 20A, 20V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

90.8nC @ 20V

Vgs (Max)

+25V, -5V

Input Capacitance (Ciss) (Max) @ Vds

1915pF @ 800V

FET Feature

-

Power Dissipation (Max)

313mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Die

Package / Case

Die

DMNH6012SPSQ-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1926pF @ 30V

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerDI5060-8

Package / Case

8-PowerTDFN

IRL3803STRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

140A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 71A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

5000pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPA075N15N3GXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

43A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 43A, 10V

Vgs(th) (Max) @ Id

4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7280pF @ 75V

FET Feature

-

Power Dissipation (Max)

39W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3 Full Pack

Recently Sold

LTC3854EMSE#PBF

LTC3854EMSE#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK 12MSOP

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402

MAX3221EETE+

MAX3221EETE+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 16TQFN

CAT93C57XI

CAT93C57XI

ON Semiconductor

IC EEPROM 2K SPI 1MHZ 8SOIC

ADA4805-2ARMZ-R7

ADA4805-2ARMZ-R7

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

SF-1206F700-2

SF-1206F700-2

Bourns

FUSE BOARD MOUNT 7A 24VDC 1206

MAX17048G+T10

MAX17048G+T10

Maxim Integrated

IC FUEL GAUGE LI-ION 1CELL 8TDFN

7443556350

7443556350

Wurth Electronics

FIXED IND 3.5UH 22.5A 3.1 MOHM

S2B-13-F

S2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMB

1N4004GP-E3/54

1N4004GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

B3S-1102

B3S-1102

Omron Electronics Inc-EMC Div

SWITCH TACTILE SPST-NO 0.05A 24V

PX2AF1XX667PSAAM

PX2AF1XX667PSAAM

Honeywell Sensing and Productivity Solutions

HEAVY DUTY PRESSURE TRANSDUCER