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STB11N52K3

STB11N52K3

For Reference Only

Part Number STB11N52K3
PNEDA Part # STB11N52K3
Description MOSFET N-CH 525V 10A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 16 - Jul 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB11N52K3 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB11N52K3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB11N52K3, STB11N52K3 Datasheet (Total Pages: 20, Size: 1,155.07 KB)
PDFSTF11N52K3 Datasheet Cover
STF11N52K3 Datasheet Page 2 STF11N52K3 Datasheet Page 3 STF11N52K3 Datasheet Page 4 STF11N52K3 Datasheet Page 5 STF11N52K3 Datasheet Page 6 STF11N52K3 Datasheet Page 7 STF11N52K3 Datasheet Page 8 STF11N52K3 Datasheet Page 9 STF11N52K3 Datasheet Page 10 STF11N52K3 Datasheet Page 11

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STB11N52K3 Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH3™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)525V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs510mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 50V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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