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STB11N65M5

STB11N65M5

For Reference Only

Part Number STB11N65M5
PNEDA Part # STB11N65M5
Description MOSFET N CH 650V 9A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,480
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 8 - May 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB11N65M5 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB11N65M5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB11N65M5, STB11N65M5 Datasheet (Total Pages: 30, Size: 1,017.69 KB)
PDFSTP11N65M5 Datasheet Cover
STP11N65M5 Datasheet Page 2 STP11N65M5 Datasheet Page 3 STP11N65M5 Datasheet Page 4 STP11N65M5 Datasheet Page 5 STP11N65M5 Datasheet Page 6 STP11N65M5 Datasheet Page 7 STP11N65M5 Datasheet Page 8 STP11N65M5 Datasheet Page 9 STP11N65M5 Datasheet Page 10 STP11N65M5 Datasheet Page 11

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STB11N65M5 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ V
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds644pF @ 100V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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