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STB11NM60N-1

STB11NM60N-1

For Reference Only

Part Number STB11NM60N-1
PNEDA Part # STB11NM60N-1
Description MOSFET N-CH 600V 10A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,364
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB11NM60N-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB11NM60N-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB11NM60N-1, STB11NM60N-1 Datasheet (Total Pages: 20, Size: 635.3 KB)
PDFSTB11NM60N-1 Datasheet Cover
STB11NM60N-1 Datasheet Page 2 STB11NM60N-1 Datasheet Page 3 STB11NM60N-1 Datasheet Page 4 STB11NM60N-1 Datasheet Page 5 STB11NM60N-1 Datasheet Page 6 STB11NM60N-1 Datasheet Page 7 STB11NM60N-1 Datasheet Page 8 STB11NM60N-1 Datasheet Page 9 STB11NM60N-1 Datasheet Page 10 STB11NM60N-1 Datasheet Page 11

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STB11NM60N-1 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 50V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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