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STB120N4LF6

STB120N4LF6

For Reference Only

Part Number STB120N4LF6
PNEDA Part # STB120N4LF6
Description MOSFET N-CH 40V 80A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 8,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB120N4LF6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB120N4LF6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB120N4LF6, STB120N4LF6 Datasheet (Total Pages: 18, Size: 907.63 KB)
PDFSTD120N4LF6 Datasheet Cover
STD120N4LF6 Datasheet Page 2 STD120N4LF6 Datasheet Page 3 STD120N4LF6 Datasheet Page 4 STD120N4LF6 Datasheet Page 5 STD120N4LF6 Datasheet Page 6 STD120N4LF6 Datasheet Page 7 STD120N4LF6 Datasheet Page 8 STD120N4LF6 Datasheet Page 9 STD120N4LF6 Datasheet Page 10 STD120N4LF6 Datasheet Page 11

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STB120N4LF6 Specifications

ManufacturerSTMicroelectronics
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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