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STB12NM60N-1

STB12NM60N-1

For Reference Only

Part Number STB12NM60N-1
PNEDA Part # STB12NM60N-1
Description MOSFET N-CH 600V 10A I2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB12NM60N-1 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB12NM60N-1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB12NM60N-1, STB12NM60N-1 Datasheet (Total Pages: 18, Size: 618.71 KB)
PDFSTW12NM60N Datasheet Cover
STW12NM60N Datasheet Page 2 STW12NM60N Datasheet Page 3 STW12NM60N Datasheet Page 4 STW12NM60N Datasheet Page 5 STW12NM60N Datasheet Page 6 STW12NM60N Datasheet Page 7 STW12NM60N Datasheet Page 8 STW12NM60N Datasheet Page 9 STW12NM60N Datasheet Page 10 STW12NM60N Datasheet Page 11

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STB12NM60N-1 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs410mOhm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30.5nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds960pF @ 50V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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