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STB150N3LH6

STB150N3LH6

For Reference Only

Part Number STB150N3LH6
PNEDA Part # STB150N3LH6
Description MOSFET N CH 30V 80A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 2,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 26 - May 31 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB150N3LH6 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB150N3LH6
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB150N3LH6, STB150N3LH6 Datasheet (Total Pages: 15, Size: 997.84 KB)
PDFSTB150N3LH6 Datasheet Cover
STB150N3LH6 Datasheet Page 2 STB150N3LH6 Datasheet Page 3 STB150N3LH6 Datasheet Page 4 STB150N3LH6 Datasheet Page 5 STB150N3LH6 Datasheet Page 6 STB150N3LH6 Datasheet Page 7 STB150N3LH6 Datasheet Page 8 STB150N3LH6 Datasheet Page 9 STB150N3LH6 Datasheet Page 10 STB150N3LH6 Datasheet Page 11

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STB150N3LH6 Specifications

ManufacturerSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3800pF @ 25V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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